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 SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BU2527A
DESCRIPTION *With TO-3PN package *High voltage *High speed switching APPLICATIONS *For use in horizontal deflection circuits of high resolution monitors.
PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO IC ICM IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Collector current (DC) Collector current-peak Base current (DC) Base current -peak Total power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base CONDITIONS VALUE 1500 800 12 30 8 12 125 150 -65~150 UNIT V V A A A A W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Collector capacitance CONDITIONS IC=100mA ;IB=0,L=25mH IE=1mA ;IC=0 IC=6A ;IB=1.2A IC=6A ;IB=1.2A VCE=BVCES; VBE=0 Tj=125 VEB=7.5V; IC=0 IC=1A ; VCE=5V IC=6A ; VCE=5V VCB=10V;IE=0; f=1.0MHz 6 5 MIN 800 7.5
BU2527A
SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBEsat ICES IEBO hFE-1 hFE-2 CC
TYP.
MAX
UNIT V
13.5 5.0 1.3 0.25 2.0 0.25 10 7 145 21 9
V V V mA mA
pF
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
BU2527A
Fig.2 outline dimensions (unindicated tolerance:0.10 mm)
3


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